Anion-specific surface valence-band states in heteropolar semiconductors: The case of GaP(110) and InP(110)
Phys Rev B Condens Matter
.
1992 Nov 15;46(20):13607-13610.
doi: 10.1103/physrevb.46.13607.
Authors
M Sancrotti
,
L Duò
,
L Calliari
,
F Manghi
,
R Cosso
,
P Weightman
PMID:
10003412
DOI:
10.1103/physrevb.46.13607
No abstract available