290-fs pulses from a semiconductor disk laser

Opt Express. 2008 Apr 14;16(8):5770-5. doi: 10.1364/oe.16.005770.

Abstract

Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped semiconductor disk laser. The all-semiconductor laser employs a graded-gap-barrier design in the gain section. A fast saturable absorber mirror serves as a passive mode-locker. No further elements for internal or external dispersion control are required.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Computer Simulation
  • Computer-Aided Design*
  • Equipment Design
  • Equipment Failure Analysis
  • Lasers, Semiconductor*
  • Lenses*
  • Models, Theoretical*
  • Oscillometry / instrumentation*
  • Oscillometry / methods
  • Signal Processing, Computer-Assisted / instrumentation*