Femtosecond pulse generation around 1500 nm using a GaInNAsSb SESAM

N K Metzger; C G Leburn; A A Lagatsky; C T A Brown; S Calvez; D Burns; H D Sun; M D Dawson; M Le Dû; J C Harmand; W Sibbett

doi:10.1364/oe.16.018739

Femtosecond pulse generation around 1500 nm using a GaInNAsSb SESAM

Opt Express. 2008 Nov 10;16(23):18739-44. doi: 10.1364/oe.16.018739.

Authors

N K Metzger¹, C G Leburn, A A Lagatsky, C T A Brown, S Calvez, D Burns, H D Sun, M D Dawson, M Le Dû, J C Harmand, W Sibbett

Affiliation

¹ SUPA School of Physics and Astronomy, University of St Andrews, St Andrews, Fife, UK. nkm2@st-and.ac.uk

PMID: 19581960
DOI: 10.1364/oe.16.018739

Abstract

The operation of a femtosecond Cr(4+):YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230 fs pulses centred at 1528 nm were generated at an average output power of 280 mW. The SESAM exhibited a low saturation fluence of 10 microJ/cm(2) and a short recovery time of 12 ps.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Computer-Aided Design
Equipment Design
Equipment Failure Analysis
Lasers, Solid-State*
Nanotechnology / instrumentation*
Reproducibility of Results
Sensitivity and Specificity
Signal Processing, Computer-Assisted / instrumentation*