Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface

Hiroaki Maeda; Ryota Sakamoto; Yoshihiko Nishimori; Junya Sendo; Fumiyuki Toshimitsu; Yoshinori Yamanoi; Hiroshi Nishihara

doi:10.1039/c1cc12832a

Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface

Chem Commun (Camb). 2011 Aug 14;47(30):8644-6. doi: 10.1039/c1cc12832a. Epub 2011 Jul 1.

Authors

Hiroaki Maeda¹, Ryota Sakamoto, Yoshihiko Nishimori, Junya Sendo, Fumiyuki Toshimitsu, Yoshinori Yamanoi, Hiroshi Nishihara

Affiliation

¹ Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-0033, Japan.

PMID: 21725533
DOI: 10.1039/c1cc12832a

Abstract

Linear and branched Fe(tpy)(2) complex oligomer wires were quantitatively formed on hydrogen-terminated silicon wafers by means of hydrosilylation of ethynylterpyridine and following stepwise coordination reactions, and the redox property of surface-attached species and its photosensitivity can be controlled by the doping density of the silicon wafers.