Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2 -functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.
Keywords: bandgap opening; bilayer graphene; field-effect transistors; molecular doping; self-assembled monolayers.
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