Improvement in crystal quality and optical properties of n-type GaN employing nano-scale SiO2 patterned n-type GaN substrate

J Nanosci Nanotechnol. 2013 Jan;13(1):545-7. doi: 10.1166/jnn.2013.6935.

Abstract

n-type GaN epitaxial layers were regrown on the patterned n-type GaN substrate (PNS) with different size of silicon dioxide (SiO2) nano dots to improve the crystal quality and optical properties. PNS with SiO2 nano dots promotes epitaxial lateral overgrowth (ELOG) for defect reduction and also acts as a light scattering point. Transmission electron microscopy (TEM) analysis suggested that PNS with SiO2 nano dots have superior crystalline properties. Hall measurements indicated that incrementing values in electron mobility were clear indication of reduction in threading dislocation and it was confirmed by TEM analysis. Photoluminescence (PL) intensity was enhanced by 2.0 times and 3.1 times for 1-step and 2-step PNS, respectively.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Crystallization / methods*
  • Gallium / chemistry*
  • Materials Testing
  • Nanostructures / chemistry*
  • Nanostructures / ultrastructure*
  • Particle Size
  • Semiconductors*
  • Silicon Dioxide / chemistry*
  • Surface Properties

Substances

  • gallium nitride
  • Silicon Dioxide
  • Gallium