High-gain phototransistors based on a CVD MoS₂ monolayer

Adv Mater. 2013 Jul 5;25(25):3456-61. doi: 10.1002/adma.201301244. Epub 2013 May 23.

Abstract

A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W(-1) ) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS2 , decreasing the carrier mobility, photoresponsivity, and photogain.

Keywords: ambient air; molybdenum disulfides; photogain; phototransistors.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Disulfides / chemistry*
  • Electric Conductivity
  • Light*
  • Molybdenum / chemistry*
  • Silicon / chemistry
  • Silicon Dioxide / chemistry
  • Transistors, Electronic*
  • Volatilization

Substances

  • Disulfides
  • Silicon Dioxide
  • Molybdenum
  • Silicon
  • molybdenum disulfide