Extrinsic and intrinsic charge trapping at the graphene/ferroelectric interface

M Humed Yusuf; Bent Nielsen; M Dawber; X Du

doi:10.1021/nl502669v

Extrinsic and intrinsic charge trapping at the graphene/ferroelectric interface

Nano Lett. 2014 Sep 10;14(9):5437-44. doi: 10.1021/nl502669v. Epub 2014 Aug 20.

Authors

M Humed Yusuf¹, Bent Nielsen, M Dawber, X Du

Affiliation

¹ Department of Physics and Astronomy, Stony Brook University , Stony Brook, New York 11794, United States.

PMID: 25134063
DOI: 10.1021/nl502669v

Abstract

The interface between graphene and the ferroelectric superlattice PbTiO3/SrTiO3 (PTO/STO) is studied. Tuning the transition temperature through the PTO/STO volume fraction minimizes the adorbates at the graphene/ferroelectric interface, allowing robust ferroelectric hysteresis to be demonstrated. "Intrinsic" charge traps from the ferroelectric surface defects can adversely affect the graphene channel hysteresis and can be controlled by careful sample processing, enabling systematic study of the charge trapping mechanism.

Keywords: Graphene; charge trapping; ferroelectric superlattice; ferroelectricity; hysteresis; interface.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.