Profound Effect of Substrate Hydroxylation and Hydration on Electronic and Optical Properties of Monolayer MoS2

Changxi Zheng; Zai-Quan Xu; Qianhui Zhang; Mark T Edmonds; Kenji Watanabe; Takashi Taniguchi; Qiaoliang Bao; Michael S Fuhrer

doi:10.1021/acs.nanolett.5b00098

Profound Effect of Substrate Hydroxylation and Hydration on Electronic and Optical Properties of Monolayer MoS2

Nano Lett. 2015 May 13;15(5):3096-102. doi: 10.1021/acs.nanolett.5b00098. Epub 2015 Apr 27.

Authors

Changxi Zheng, Zai-Quan Xu, Qianhui Zhang, Mark T Edmonds, Kenji Watanabe¹, Takashi Taniguchi¹, Qiaoliang Bao², Michael S Fuhrer

Affiliations

¹ ∥National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
² ⊥Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, People's Republic of China.

PMID: 25897823
DOI: 10.1021/acs.nanolett.5b00098

Abstract

Atomic force microscopy, Kelvin probe force microscopy, and scanning photoluminescence spectroscopy image the progressive postgrowth hydroxylation and hydration of atomically flat Al2O3(0001) under monolayer MoS2, manifested in large work function shifts (100 mV) due to charge transfer (>10(13) cm(-2)) from the substrate and changes in PL intensity, energy, and peak width. In contrast, trapped water between exfoliated graphene and Al2O3(0001) causes surface potential and doping changes one and two orders of magnitude smaller, respectively, and MoS2 grown on hydrophobic hexagonal boron nitride is unaffected by water exposure.

Keywords: Molybdenum disulfide; boron nitride; doping; photoluminescence; substrate; transition metal dichalcogenides.

Publication types

Research Support, Non-U.S. Gov't