To achieve a reliable formation of a surface-enhanced Raman scattering (SERS) sensor with evenly distributed hot spots on a wafer scale substrate, we propose a hybrid approach combining physical nanolithography for preparing Au nanodisks and chemical Au reduction for growing them. During the chemical growth, the interstitial distance between the nanodisks decreased from 60 nm to sub-5 nm. The resulting patterns of the nanogap-rich Au nanodisks successfully enhance the SERS signal, and its intensity map shows only a 5% or less signal variation on the entire sample.