Atom probe tomography of a Ti-Si-Al-C-N coating grown on a cemented carbide substrate

M Thuvander; G Östberg; M Ahlgren; L K L Falk

doi:10.1016/j.ultramic.2015.04.008

Atom probe tomography of a Ti-Si-Al-C-N coating grown on a cemented carbide substrate

Ultramicroscopy. 2015 Dec:159 Pt 2:308-13. doi: 10.1016/j.ultramic.2015.04.008. Epub 2015 Apr 25.

Authors

M Thuvander¹, G Östberg¹, M Ahlgren², L K L Falk³

Affiliations

¹ Department of Applied Physics, Chalmers University of Technology, SE 412 96 Göteborg, Sweden.
² Sandvik Coromant, SE 126 80 Stockholm, Sweden.
³ Department of Applied Physics, Chalmers University of Technology, SE 412 96 Göteborg, Sweden. Electronic address: lklfalk@chalmers.se.

PMID: 25956619
DOI: 10.1016/j.ultramic.2015.04.008

Abstract

The elemental distribution within a Ti-Si-Al-C-N coating grown by physical vapour deposition on a Cr-doped WC-Co cemented carbide substrate has been investigated by atom probe tomography. Special attention was paid to the coating/substrate interface region. The results indicated a diffusion of substrate binder phase elements into the Ti-N adhesion layer. The composition of this layer, and the Ti-Al-N interlayer present between the adhesion layer and the main Ti-Si-Al-C-N layer, appeared to be sub-stoichiometric. The analysis of the interlayer showed the presence of internal surfaces, possibly grain boundaries, depleted in Al. The composition of the main Ti-Al-Si-C-N layer varied periodically in the growth direction; layers enriched in Ti appeared with a periodicity of around 30 nm. Laser pulsing resulted in a good mass resolution that made it possible to distinguish between N(+) and Si(2+) at 14 Da.

Keywords: Atom probe tomography; Cemented carbide cutting tools; Diffusion; Nitrides; Physical vapour deposition.

Publication types

Research Support, Non-U.S. Gov't