Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures

Jing Zhang; Jinhuan Wang; Peng Chen; Yue Sun; Shuang Wu; Zhiyan Jia; Xiaobo Lu; Hua Yu; Wei Chen; Jianqi Zhu; Guibai Xie; Rong Yang; Dongxia Shi; Xiulai Xu; Jianyong Xiang; Kaihui Liu; Guangyu Zhang

doi:10.1002/adma.201504631

Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures

Adv Mater. 2016 Mar 9;28(10):1950-6. doi: 10.1002/adma.201504631. Epub 2015 Dec 28.

Authors

Jing Zhang¹, Jinhuan Wang², Peng Chen¹, Yue Sun¹, Shuang Wu¹, Zhiyan Jia³, Xiaobo Lu¹, Hua Yu¹, Wei Chen¹, Jianqi Zhu¹, Guibai Xie⁴, Rong Yang¹, Dongxia Shi¹, Xiulai Xu¹, Jianyong Xiang³, Kaihui Liu^{2

5}, Guangyu Zhang^{1

5}

Affiliations

¹ Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
² State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China.
³ State Key Laboratory for Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China.
⁴ National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology, Xi'an, 170100, China.
⁵ Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China.

PMID: 26708256
DOI: 10.1002/adma.201504631

Abstract

Epitaxial growth of A-A and A-B stacking MoS2 on WS2 via a two-step chemical vapor deposition method is reported. These epitaxial heterostructures show an atomic clean interface and a strong interlayer coupling, as evidenced by systematic characterization. Low-frequency Raman breathing and shear modes are observed in commensurate stacking bilayers for the first time; these can serve as persuasive fingerprints for interfacial quality and stacking configurations.

Keywords: MoS2/WS2; charge transfer; interlayer coupling; low-frequency Raman modes; photoluminescence spectra; van der Waals epitaxial heterostructures.