Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering
Nat Commun
.
2016 Jan 28:7:10428.
doi: 10.1038/ncomms10428.
Authors
David J Perello
,
Sang Hoon Chae
,
Seunghyun Song
,
Young Hee Lee
PMID:
26818132
PMCID:
PMC4738328
DOI:
10.1038/ncomms10428
No abstract available
Publication types
Published Erratum