Monolithic 3D CMOS Using Layered Semiconductors

Angada B Sachid; Mahmut Tosun; Sujay B Desai; Ching-Yi Hsu; Der-Hsien Lien; Surabhi R Madhvapathy; Yu-Ze Chen; Mark Hettick; Jeong Seuk Kang; Yuping Zeng; Jr-Hau He; Edward Yi Chang; Yu-Lun Chueh; Ali Javey; Chenming Hu

doi:10.1002/adma.201505113

Monolithic 3D CMOS Using Layered Semiconductors

Adv Mater. 2016 Apr 6;28(13):2547-54. doi: 10.1002/adma.201505113. Epub 2016 Feb 2.

Authors

Angada B Sachid^{1

2}, Mahmut Tosun^{1

2

3}, Sujay B Desai^{1

2

3}, Ching-Yi Hsu^{1

4}, Der-Hsien Lien^{1

2

5}, Surabhi R Madhvapathy^{1

2}, Yu-Ze Chen⁶, Mark Hettick^{1

2

7}, Jeong Seuk Kang^{1

2}, Yuping Zeng¹, Jr-Hau He⁵, Edward Yi Chang⁴, Yu-Lun Chueh⁶, Ali Javey^{1

2

3

7}, Chenming Hu¹

Affiliations

¹ Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
² Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
³ Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720, USA.
⁴ Department of Material Sciences and Engineering, National Chao-Tung University, Hsinchu, 300, Taiwan.
⁵ Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
⁶ Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
⁷ Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.

PMID: 26833783
DOI: 10.1002/adma.201505113

Abstract

Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.

Keywords: metal oxide semiconductors; monolithic 3D integration; transition metal dichalcogenides; ultra-low voltage operation.