Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe₂/MoS₂ van der Waals Heterostructures

Kenan Zhang; Tianning Zhang; Guanghui Cheng; Tianxin Li; Shuxia Wang; Wei Wei; Xiaohao Zhou; Weiwei Yu; Yan Sun; Peng Wang; Dong Zhang; Changgan Zeng; Xingjun Wang; Weida Hu; Hong Jin Fan; Guozhen Shen; Xin Chen; Xiangfeng Duan; Kai Chang; Ning Dai

doi:10.1021/acsnano.6b00980

Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe₂/MoS₂ van der Waals Heterostructures

ACS Nano. 2016 Mar 22;10(3):3852-8. doi: 10.1021/acsnano.6b00980. Epub 2016 Mar 9.

Authors

Kenan Zhang¹, Tianning Zhang¹, Guanghui Cheng², Tianxin Li¹, Shuxia Wang¹, Wei Wei¹, Xiaohao Zhou¹, Weiwei Yu¹, Yan Sun¹, Peng Wang¹, Dong Zhang³, Changgan Zeng², Xingjun Wang¹, Weida Hu¹, Hong Jin Fan⁴, Guozhen Shen³, Xin Chen¹, Xiangfeng Duan⁵, Kai Chang^{3

6}, Ning Dai^{1

6}

Affiliations

¹ National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
² Hefei National Laboratory for Physical Sciences at the Microscale (HFNL) and Department of Physics, University of Science and Technology of China , Hefei, Anhui 230026, China.
³ State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
⁴ Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University , Singapore 637371, Singapore.
⁵ Department of Chemistry and Biochemistry, University of California , Los Angeles, California 90095, United States.
⁶ Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, China.

PMID: 26950255
DOI: 10.1021/acsnano.6b00980

Abstract

We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.

Keywords: MoS2; MoTe2; interlayer transition; type-II band alignment; van der Waals heterostructure.

Publication types

Research Support, Non-U.S. Gov't