Quantized Conductance and Large g-Factor Anisotropy in InSb Quantum Point Contacts

Nano Lett. 2016 Dec 14;16(12):7509-7513. doi: 10.1021/acs.nanolett.6b03297. Epub 2016 Nov 8.

Abstract

Because of a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1| = 26) and out-of-plane (|g1| = 52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.

Keywords: InSb quantum well; conductance quantization; electron effective mass; g-factor anisotropy; quantum point contact.

Publication types

  • Research Support, Non-U.S. Gov't