High-Electron-Mobility and Air-Stable 2D Layered PtSe2 FETs

Yuda Zhao; Jingsi Qiao; Zhihao Yu; Peng Yu; Kang Xu; Shu Ping Lau; Wu Zhou; Zheng Liu; Xinran Wang; Wei Ji; Yang Chai

doi:10.1002/adma.201604230

High-Electron-Mobility and Air-Stable 2D Layered PtSe₂ FETs

Adv Mater. 2017 Feb;29(5). doi: 10.1002/adma.201604230. Epub 2016 Nov 25.

Authors

Yuda Zhao^{1

2}, Jingsi Qiao^{1

3

4}, Zhihao Yu⁵, Peng Yu⁶, Kang Xu¹, Shu Ping Lau^{1

2}, Wu Zhou⁷, Zheng Liu⁶, Xinran Wang⁵, Wei Ji^{3

4}, Yang Chai^{1

2}

Affiliations

¹ Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.
² The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, P. R. China.
³ Department of Physics, Renmin University of China, Beijing, 100872, P. R. China.
⁴ Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing, 100872, P. R. China.
⁵ National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
⁶ School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
⁷ Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.

PMID: 27886410
DOI: 10.1002/adma.201604230

Abstract

The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe₂ . The high room-temperature electron mobility and near-infrared photo-response, together with much better air-stability, make PtSe₂ a versatile electronic 2D layered material.

Keywords: 2D layered materials; PtSe2; electronic structure; mobility; transition metal dichalcogenides.