Multicolor light-emitting devices with Tb2O3 on silicon

Ling Li; Shenwei Wang; Guangyao Mu; Xue Yin; Lixin Yi

doi:10.1038/srep42479

Multicolor light-emitting devices with Tb₂O₃ on silicon

Sci Rep. 2017 Feb 21:7:42479. doi: 10.1038/srep42479.

Authors

Ling Li¹, Shenwei Wang¹, Guangyao Mu¹, Xue Yin¹, Lixin Yi¹

Affiliation

¹ Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, China.

Abstract

Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb₂O₃ on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb³⁺ ions in Tb₂O₃. The electroluminescence mechanisms of the Tb₂O₃ light-emitting devices are discussed. In addition, visible and near infrared electroluminescence was observed in rare-earth (Eu³⁺, Sm³⁺ and Yb³⁺) doped Tb₂O₃ light-emitting devices.

Publication types

Research Support, Non-U.S. Gov't