Magnetic Nanoplatelet-Based Spin Memory Device Operating at Ambient Temperatures

Guy Koplovitz; Darinka Primc; Oren Ben Dor; Shira Yochelis; Dvir Rotem; Danny Porath; Yossi Paltiel

doi:10.1002/adma.201606748

Magnetic Nanoplatelet-Based Spin Memory Device Operating at Ambient Temperatures

Adv Mater. 2017 May;29(17). doi: 10.1002/adma.201606748. Epub 2017 Mar 3.

Authors

Guy Koplovitz^{1

2

3}, Darinka Primc^{4

5}, Oren Ben Dor^{1

2}, Shira Yochelis^{1

2}, Dvir Rotem^{2

3}, Danny Porath^{2

3}, Yossi Paltiel^{1

2}

Affiliations

¹ Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
² Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
³ Institute of Chemistry, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
⁴ Department of Materials, Imperial College London, London, SW7 2AZ, UK.
⁵ Laboratory for Multifunctional Materials, Department of Materials, ETH Zurich, Zurich, 8093, Switzerland.

PMID: 28256757
DOI: 10.1002/adma.201606748

Abstract

There is an increasing demand for realizing a simple Si based universal memory device working at ambient temperatures. In principle, nonvolatile magnetic memory can operate at low power consumption and high frequencies. However, in order to compete with existing memory technology, size reduction and simplification of the used material systems are essential. In this work, the chiral-induced spin selectivity effect is used along with 30-50 nm ferromagnetic nanoplatelets in order to realize a simple magnetic memory device. The vertical memory is Si compatible, easy to fabricate, and in principle can be scaled down to a single nanoparticle size. Results show clear dual magnetization behavior with threefold enhancement between the one and zero states. The magnetization of the device is accompanied with large avalanche like noise that is ascribed to the redistribution of current densities due to spin accumulation inducing coupling effects between the different nanoplatelets.

Keywords: magnetic memory; magnetic nanoparticles; molecular electronics; self-assembled monolayers; spintronics.