Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy

Heng Li; Hui-Yu Cheng; Wei-Liang Chen; Yi-Hsin Huang; Chi-Kang Li; Chiao-Yun Chang; Yuh-Renn Wu; Tien-Chang Lu; Yu-Ming Chang

doi:10.1038/srep45519

Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy

Sci Rep. 2017 Mar 30:7:45519. doi: 10.1038/srep45519.

Authors

Heng Li¹, Hui-Yu Cheng², Wei-Liang Chen², Yi-Hsin Huang², Chi-Kang Li³, Chiao-Yun Chang¹, Yuh-Renn Wu³, Tien-Chang Lu¹, Yu-Ming Chang²

Affiliations

¹ Dept. of Photonics &Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan.
² Center for Condensed Matter Sciences, National Taiwan University, 10617, Taipei, Taiwan.
³ Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan.

Abstract

We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the In_xGa_1-xN/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E₂(high) Raman peak intensity and frequency shift, V-shaped pits in the MQWs can be traced down to the dislocations originated in the cone tip area of PSS. Detail analysis of the PL peak distribution further revealed that the indium composition in the MQWs is related to the residual strain propagating from the PSS-GaN heterointerface toward the LED surface. Numerical simulation based on the indium composition distribution also led to a radiative recombination rate distribution that shows agreement with the experimental PL intensity distribution in the In_xGa_1-xN/GaN MQWs active layer.

Publication types

Research Support, Non-U.S. Gov't