Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate

Materials (Basel). 2015 Apr 22;8(4):1993-1999. doi: 10.3390/ma8041993.

Abstract

The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.

Keywords: GaN-based LED; concave patterned sapphire substrate; crystal quality; light output power.