It is demonstrated that a stamp composed of a poly(dimethylsiloxane) (PDMS) bulk and perfluoropolyether (PFPE) coating fabricated by a simple dip-coating method has the following properties that are ideal for the transfer patterning of various materials. Deposited by a condensation reaction between PDMS and PFPE molecules as well as the adjacent PFPE molecules, the PFPE coating has a strong adhesion to the PDMS surface and strong internal cohesion, while providing a low energy surface. Furthermore, it is found to function as a bidirectional diffusion barrier: it effectively prevents organic small molecules deposited on the stamp from being absorbed into free volumes of PDMS; it also prevents PDMS oligomers from migrating onto the layer to be transferred, thereby avoiding the contamination of that layer. Morphological and elemental characterization of the surfaces of the transferred organic semiconductor and graphene layers confirms a successful transfer with a high degree of surface cleanliness. The quality of interfaces mechanically bonded using the PFPE-coated stamps and the cleanliness of the transferred layers are remarkably high that the electronic functions of a transfer-bonded organic heterojunction are comparable to those of the same interface formed by vacuum deposition, and that the charge transport across the transfer-bonded graphene-graphene and graphene-MoO3 interfaces is efficient. Our results demonstrate that the PFPE-coated stamp enables patterned depositions of materials with high quality interfaces while avoiding a high temperature or wet process.
Keywords: PDMS stamps; PFPE coatings; diffusion blocking layers; heterojunctions; thin-film transfer.