This work reports electronic excitation energies of neutral and charged oligothiophenes (OT n ) with repeat unit n = 2-6 computed by routinely used semiempirical and time-dependent density functional theory (TD-DFT) methods. More specifically, for OT n , OTn +, and OTn -, we calculated vertical transition energies for electronic absorption spectroscopy employing the Zerner's version of intermediate neglect differential overlap method for structures optimized by the PM6 semiempirical method and the TD-DFT method with three different functionals, B3LYP, BVP86, and M06-2X, for structures optimized by the ground-state DFT method employing the same functionals. We also calculated vertical transition energies for the emission spectroscopy from the lowest singlet excited states by employing the TD-DFT method for the structures optimized for the lowest singlet excited states. In addition to computational results in vacuum, solution phase data calculated at the level of polarizable continuum model are reported and compared with available experimental data. Most of the data are fitted reasonably well by two simple model functions, one based on a Frenkel exciton theory and the other based on the model of independent electrons in a box with sinusoidal modulation of potential. Despite similar levels of fitting performance, the two models produce distinctively different asymptotic values of excitation energies. Comparison of these with available experimental and computational data suggests that the values based on the exciton model, while seemingly overestimating, are closer to true values than those based on the other model. This assessment is confirmed by additional calculations for a larger oligomer. The fitting parameters offer new means to understand the relationship between electronic excitations of OTs and their sizes and suggest the feasibility of constructing simple coarse-grained exciton-bath models applicable for aggregates of OTs.