Chalcogenide-based materials have attracted widespread interest in high-performance thermoelectric research fields. A strategy for the application of two types of chalcogenide for improved thermoelectric performance is described herein. Tin selenide (SnSe) is used as a base material, and Te nanoneedles are crystallized in the SnSe, resulting in the generation of a composite structure of SnSe with Te nanoneedles. The thermoelectric properties with various reaction times are investigated to reveal the optimum conditions for enhanced thermoelectric performance. A reaction time of 4 h at 450 K generated a composite Te nanoneedles/SnSe sample with the maximum ZT value, 3.2 times larger than that of the pristine SnSe. This result is attributed to both the reduced thermal conductivity from the effective phonon scattering of heterointerfaces and the improved electrical conductivity value due to the introduction of Te nanoparticles. This strategy suggests an approach to generating high-performance practical thermoelectric materials.
Keywords: inner-site crystallization; nanoneedles; tellurium; thermoelectric; tin selenide.