First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates

Chen Li; Huilong Zhu; Yongkui Zhang; Qi Wang; Xiaogen Yin; Junjie Li; Guilei Wang; Zhenzhen Kong; Xuezheng Ai; Lu Xie; Yongbo Liu; Yangyang Li; Weixing Huang; Zijin Yan; Zhongrui Xiao; Henry H Radamson; Junfeng Li; Wenwu Wang

doi:10.1021/acs.nanolett.1c01033

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates

Nano Lett. 2021 Jun 9;21(11):4730-4737. doi: 10.1021/acs.nanolett.1c01033. Epub 2021 May 26.

Authors

Chen Li^{1

2}, Huilong Zhu^{1

2

3}, Yongkui Zhang¹, Qi Wang¹, Xiaogen Yin^{1

2}, Junjie Li¹, Guilei Wang¹, Zhenzhen Kong¹, Xuezheng Ai¹, Lu Xie^{1

2}, Yongbo Liu^{1

2}, Yangyang Li^{1

2}, Weixing Huang^{1

2}, Zijin Yan^{1

2}, Zhongrui Xiao^{1

2}, Henry H Radamson^{1

2}, Junfeng Li¹, Wenwu Wang¹

Affiliations

¹ Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
² University of Chinese Academy of Sciences, Beijing 100049, China.
³ University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.

PMID: 34038143
DOI: 10.1021/acs.nanolett.1c01033

Abstract

A novel n-type nanowire/nanosheet (NW/NS) vertical sandwich gate-all-around field-effect-transistor (nVSAFET) with self-aligned and replaced high-κ metal gates (HKMGs) is presented for the first time, aiming at a 3 nm technology node and beyond. The nVSAFETs were fabricated by an integration flow of Si/SiGe epitaxy, quasi-atomic layer etching (qALE) of SiGe selective to Si, formation of SiGe/Si core/shell NS/NW structure, building of nitride dummy gate, and replacement of the dummy gate. This fabrication method is complementary metal oxide semiconductor (CMOS)-compatible, simple, and reproducible, and NWs with a diameter of 17 nm and NSs with a thickness of 20 nm were obtained. Excellent control of short-channel-effects was presented. The device performance was also investigated and discussed. The proposed integration scheme has great potential for applications in chip manufacturing, especially with vertical channel devices.

Keywords: nanowire/nanosheet; replaced metal gate (RMG); self-aligned mental gate; universal process; vertical gate-all-around field-effect-transistor (vGAAFET).