Ultrathin indium vanadate/cadmium selenide-amine step-scheme heterojunction with interfacial chemical bonding for promotion of visible-light-driven carbon dioxide reduction

Feifei Mei; Kai Dai; Jinfeng Zhang; Linlin Li; Changhao Liang

doi:10.1016/j.jcis.2021.10.034

Ultrathin indium vanadate/cadmium selenide-amine step-scheme heterojunction with interfacial chemical bonding for promotion of visible-light-driven carbon dioxide reduction

J Colloid Interface Sci. 2022 Feb 15;608(Pt 2):1846-1856. doi: 10.1016/j.jcis.2021.10.034. Epub 2021 Oct 16.

Authors

Feifei Mei¹, Kai Dai², Jinfeng Zhang¹, Linlin Li³, Changhao Liang⁴

Affiliations

¹ Anhui Province Key Laboratory of Pollutant Sensitive Materials and Environmental RemediationSchool of Physics and Electronic Information, Huaibei Normal University, Huaibei, Anhui 235000, PR China.
² Anhui Province Key Laboratory of Pollutant Sensitive Materials and Environmental RemediationSchool of Physics and Electronic Information, Huaibei Normal University, Huaibei, Anhui 235000, PR China. Electronic address: daikai940@chnu.edu.cn.
³ Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100140, PR China. Electronic address: lilinlin@binn.cas.cn.
⁴ Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, PR China. Electronic address: chliang@issp.ac.cn.

PMID: 34742093
DOI: 10.1016/j.jcis.2021.10.034

Abstract

The formation of interfacial chemical bonding in heterostructures plays an important role in the transport of carriers. Herein, we firstly prepared ultrathin InVO₄ nanosheet (Ns) with a thickness of 1.5 nm. Diethylenetriamine-modified CdSe (CdSe-DETA) nanobelts are in-situ deposited on the surface of ultrathin InVO₄ Ns to build a InVO₄/CdSe-DETA step-scheme (S-scheme) heterojunction photocatalysts. The protonated DETA acts as an amine-bridge to promote the formation of a tight chemical bond at the interface of InVO₄/CdSe-DETA, thereby promoting the transfer of carriers at the interface. For photocatalytic CO₂ reduction, the rationally designed InVO₄/CdSe-DETA S-scheme photocatalyst exhibits a remarkable CO generation rate of 27.9 µmol h^-1 g^-1 at 420 nm, which is 3.35 and 3.39 times higher than that of CdSe-DETA and InVO₄ Ns, respectively. The new method by using interfacial chemical bonding to facilitate interfacial charge transportation provide a promising strategy for improve photocatalysis.

Keywords: Built-in electric field; CdSe-amine; InVO(4); Photocatalytic CO(2) reduction; S-scheme.