Solely light-induced water splitting represents a promising avenue for a carbon-free energy future, based on reliable energy sources. Such processes can be performed using coupled semiconductor materials (the so-called direct Z-scheme design) that facilitate spatial separation of (photo)excited electrons and holes, prevent their recombination, and allow water-splitting half-reactions proceeding at each corresponding semiconductor side. In this work, we proposed and prepared a specific structure, based on WO3g-x/CdWO4/CdS coupled semiconductors, created by annealing of a common WO3/CdS direct Z-scheme. WO3-x/CdWO4/CdS flakes were further combined with a plasmon-active grating for the creation of the so-called artificial leaf design, making possible complete utilization of the sunlight spectrum. The proposed structure enables water splitting with high production of stoichiometric amounts of oxygen and hydrogen without undesirable catalyst photodegradation. Several control experiments confirm the creation of electrons and holes participating in the water splitting half-reaction in a spatially selective manner.
Keywords: Z-scheme; artificial leaf; overall water splitting; plasmon photosensitization; sunlight.