Transiently controlled emission from ZnO surface

Tanmay Das; Sesha Vempati

doi:10.1088/1361-6528/ad6574

Transiently controlled emission from ZnO surface

Nanotechnology. 2024 Aug 7;35(43). doi: 10.1088/1361-6528/ad6574.

Authors

Tanmay Das¹, Sesha Vempati¹

Affiliation

¹ Indian Institute of Technology Bhilai, Kutelabhata, Bhilai, Chhattisgarh 491002, India.

PMID: 39029472
DOI: 10.1088/1361-6528/ad6574

Abstract

We report on a photon (∼3.08 eV equivalent to 402 nm) controlled optical emission from ZnO (101¯0). Under below band gap excitation (∼2.33 eV equivalent to ∼532 nm), significant photoluminescence (PL) overlapped with Raman response is observed. The broad PL consists of three bands (629 (A), 690 (B), and 751 (C) nm) attributed to the defects arising due to excess zinc and charged oxygen vacancy. By employing asecondexcitation source at 402 nm, we demonstrate about 50% reduction in the overall PL. We utilize the doubly positive oxygen vacancy state to control the PL emission while transiently reducing its density.

Keywords: ZnO; below-bandgap excitation; defect states; photoluminescence.