Extremely large magnetoresistance in twisted intertwined graphene spirals

Yiwen Zhang; Bo Xie; Yue Yang; Yueshen Wu; Xin Lu; Yuxiong Hu; Yifan Ding; Jiadian He; Peng Dong; Jinghui Wang; Xiang Zhou; Jianpeng Liu; Zhu-Jun Wang; Jun Li

doi:10.1038/s41467-024-50456-0

Extremely large magnetoresistance in twisted intertwined graphene spirals

Nat Commun. 2024 Jul 20;15(1):6120. doi: 10.1038/s41467-024-50456-0.

Authors

Yiwen Zhang^#^{1

2}, Bo Xie^#^{1

2}, Yue Yang^#¹, Yueshen Wu^#^{1

2}, Xin Lu¹, Yuxiong Hu¹, Yifan Ding^{1

2}, Jiadian He^{1

2}, Peng Dong^{1

2}, Jinghui Wang^{1

2}, Xiang Zhou^{1

2}, Jianpeng Liu^{3

4

5}, Zhu-Jun Wang⁶, Jun Li^{7

8}

Affiliations

¹ School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.
² ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China.
³ School of Physical Science and Technology, ShanghaiTech University, Shanghai, China. liujp@shanghaitech.edu.cn.
⁴ ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China. liujp@shanghaitech.edu.cn.
⁵ Liaoning Academy of Materials, Shenyang, China. liujp@shanghaitech.edu.cn.
⁶ School of Physical Science and Technology, ShanghaiTech University, Shanghai, China. wangzhj3@shanghaitech.edu.cn.
⁷ School of Physical Science and Technology, ShanghaiTech University, Shanghai, China. lijun3@shanghaitech.edu.cn.
⁸ ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China. lijun3@shanghaitech.edu.cn.

^# Contributed equally.

Abstract

Extremely large magnetoresistance (XMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, XMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or exceptionally high electric conductivity and mobility. Our study explores this phenomenon in a recently developed graphene moiré system, which demonstrates XMR owing to its topological structure and high-quality crystal formation. We investigate the electronic properties of three-dimensional intertwined twisted graphene spirals (TGS), manipulating the screw dislocation axis to achieve a rotation angle of 7.3°. Notably, at 14 T and 2 K, the magnetoresistance of these structures reaches 1.7 × 10⁷%, accompanied by a metal-insulator transition as the temperature increases. This transition becomes noticeable when the magnetic field exceeds a minimal threshold of approximately 0.1 T. These observations suggest the possible existence of complex, correlated states within the partially filled three-dimensional Landau levels of the 3D TGS system. Our findings open up possibilities for achieving XMR by engineering the topological structure of 2D layered moiré systems.