Recent reports on machine learning and machine vision (MV) devices have demonstrated the potential of two-dimensional (2D) materials and devices. Yet, scalable 2D devices are being challenged by contact resistance and Fermi level pinning (FLP), power consumption, and low-cost CMOS compatible lithography processes. To enable CMOS + 2D, it is essential to find a proper lithography strategy that can fulfill these requirements. Here, we explored a modified van der Waals (vdW) deposition lithography and demonstrated a relatively new class of van der Waals field effect transistors (vdW-FETs) based on 2D materials. This lithography strategy enabled us to unlock high-performance devices evident by high current on-off ratio (Ion/I
Keywords: 2D-field-effect-transistors; MoS2/WSe2 diode; MoS2/WSe2 photodetector; gate tunable photodetector; phototransistor; van der waals.