BCN-driven interfacial effect: A novel strategy to remarkably enhance the capacitance of Co3O4/NiO for supercapacitor

Huize Zhang; Hongxiang Xie; Deqi Wang; Yang Xu; Mingzhi Yang; Zizheng Ai; Yongliang Shao; Dong Shi; Yongzhong Wu; Xiaopeng Hao; Huaping Zhao; Yong Lei

doi:10.1016/j.jcis.2024.11.125

BCN-driven interfacial effect: A novel strategy to remarkably enhance the capacitance of Co₃O₄/NiO for supercapacitor

J Colloid Interface Sci. 2024 Nov 19;680(Pt B):572-580. doi: 10.1016/j.jcis.2024.11.125. Online ahead of print.

Authors

Huize Zhang¹, Hongxiang Xie¹, Deqi Wang¹, Yang Xu¹, Mingzhi Yang¹, Zizheng Ai¹, Yongliang Shao¹, Dong Shi², Yongzhong Wu³, Xiaopeng Hao¹, Huaping Zhao⁴, Yong Lei⁴

Affiliations

¹ School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, PR China.
² School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, PR China. Electronic address: shidong@qlu.edu.cn.
³ School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, PR China. Electronic address: wuyz@sdu.edu.cn.
⁴ Fachgebiet Angewandte Nanophysik, Institut für Physik & IMN MacroNano, Technische Universität Ilmenau, 98693 Ilmenau, Germany.

PMID: 39579423
DOI: 10.1016/j.jcis.2024.11.125

Abstract

A BCN/Co₃O₄/NiO (BCN/CNOs) hetero-interface was developed to introduce a novel strategy that remarkably enhances the specific capacitance of transition metal oxides (TMOs). The engineered hetero-interface driven by BCN was characterized by plentiful electrons accumulation and effectively increased the specific capacitance of the as-prepared BCN/CNOs electrode to 8533 mF cm^-2 at 2 mA cm^-2, obtaining 154 % improvement compared to acid-treated carbon cloth loaded CNOs (ACC/CNOs). DFT theoretical calculations indicated that the BCN-driven interfacial effect primarily accelerates the charge transfer due to charge accumulation at interface between BCN and CNOs. Due to charge rearrangement at the interface, the reduced diffusion barrier of OH^- on the surface of CNOs significantly improved the charge storage capacity. This research provides a universal reference basis for remarkably improving the capacitance of TMOs.

Keywords: Aqueous supercapacitors; Boron carbonitride; Improved capacitance; Interfacial effect; Transition metallic oxides.