Exploring semiconductor potential: novel boron-based Ti3AlC2 and Ti4AlN3 MAX phase composites with tunable band gaps

Abstract

This research focuses on synthesizing chemically and thermally stable novel in situ Ti₄AlN₃ and Ti₃AlC₂ MAX phase reinforced boron-based composites using hot pressed and inert sintering processes, enabling a sizeable and wider bandgap for semiconductor applications. The study found that the MAX phase is formed from 0.2% to 2.9% in fabricated samples with increasing sintering temperatures from 950 °C to 1325 °C. As the sintering temperature increases, the percentage of crystallinity in Ti₄AlN₃ MAX phase reinforced boron-based composites increases from 69.14% to 89.88%, while in Ti₃AlC₂ MAX phase reinforced boron-based composites, it increases from 71.02% to 77.86%. And the energy bandgap shows a declining trend from 2.33 eV to 1.78 eV for Ti₄AlB₂N sample composites and 2.60 eV to 2.40 for Ti₄AlB₂C sample composites. The UV-vis test for boron-based Ti₄AlN₃ and Ti₃AlC₂ MAX phase composites shows an absorbance rate ranging from 0.065 a.u. to 0.63 a.u. and 0.008 to 2.4 a.u. respectively with increasing sintering temperature. Tuning these bandgap variations for Ti₄AlN₃ and Ti₃AlC₂ MAX phase reinforced boron-based composites with sintering temperature allows for customization of the material's optical absorption and emission spectra, which is important for semiconductor properties and for electronic and optoelectronic devices.