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Ballistic carbon nanotube field-effect transistors.
Javey A, Guo J, Wang Q, Lundstrom M, Dai H. Javey A, et al. Among authors: guo j. Nature. 2003 Aug 7;424(6949):654-7. doi: 10.1038/nature01797. Nature. 2003. PMID: 12904787
High-field quasiballistic transport in short carbon nanotubes.
Javey A, Guo J, Paulsson M, Wang Q, Mann D, Lundstrom M, Dai H. Javey A, et al. Among authors: guo j. Phys Rev Lett. 2004 Mar 12;92(10):106804. doi: 10.1103/PhysRevLett.92.106804. Epub 2004 Mar 12. Phys Rev Lett. 2004. PMID: 15089227
Ballistic InAs nanowire transistors.
Chuang S, Gao Q, Kapadia R, Ford AC, Guo J, Javey A. Chuang S, et al. Among authors: guo j. Nano Lett. 2013 Feb 13;13(2):555-8. doi: 10.1021/nl3040674. Epub 2013 Jan 3. Nano Lett. 2013. PMID: 23256503
Diameter-dependent electron mobility of InAs nanowires.
Ford AC, Ho JC, Chueh YL, Tseng YC, Fan Z, Guo J, Bokor J, Javey A. Ford AC, et al. Among authors: guo j. Nano Lett. 2009 Jan;9(1):360-5. doi: 10.1021/nl803154m. Nano Lett. 2009. PMID: 19143505
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