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Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta2O5/Al2O3/TiN Memristors.
Park TW, Moon J, Shin DH, Kim HJ, Kim SS, Cho JM, Park H, Woo KS, Kim DY, Cheong S, Song H, Shin JH, Lee SH, Ghenzi N, Hwang CS. Park TW, et al. Among authors: woo ks. ACS Appl Mater Interfaces. 2024 Nov 27;16(47):65046-65057. doi: 10.1021/acsami.4c15598. Epub 2024 Nov 12. ACS Appl Mater Interfaces. 2024. PMID: 39531380
263 results