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Unexpected benefits of rapid growth rate for III-V nanowires.
Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Fickenscher MA, Perera S, Hoang TB, Smith LM, Jackson HE, Yarrison-Rice JM, Zhang X, Zou J. Joyce HJ, et al. Among authors: jagadish c. Nano Lett. 2009 Feb;9(2):695-701. doi: 10.1021/nl803182c. Nano Lett. 2009. PMID: 19115835
Growth mechanism of truncated triangular III-V nanowires.
Zou J, Paladugu M, Wang H, Auchterlonie GJ, Guo YN, Kim Y, Gao Q, Joyce HJ, Tan HH, Jagadish C. Zou J, et al. Among authors: jagadish c. Small. 2007 Mar;3(3):389-93. doi: 10.1002/smll.200600503. Small. 2007. PMID: 17285644 No abstract available.
Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures.
Paladugu M, Zou J, Guo YN, Zhang X, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y. Paladugu M, et al. Among authors: jagadish c. Angew Chem Int Ed Engl. 2009;48(4):780-3. doi: 10.1002/anie.200804630. Angew Chem Int Ed Engl. 2009. PMID: 19072799 No abstract available.
Evolution of epitaxial InAs nanowires on GaAs 111B.
Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C. Zhang X, et al. Among authors: jagadish c. Small. 2009 Mar;5(3):366-9. doi: 10.1002/smll.200800690. Small. 2009. PMID: 19152357 No abstract available.
249 results