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Unexpected benefits of rapid growth rate for III-V nanowires.
Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Fickenscher MA, Perera S, Hoang TB, Smith LM, Jackson HE, Yarrison-Rice JM, Zhang X, Zou J. Joyce HJ, et al. Among authors: yarrison rice jm. Nano Lett. 2009 Feb;9(2):695-701. doi: 10.1021/nl803182c. Nano Lett. 2009. PMID: 19115835
Novel growth and properties of GaAs nanowires on Si substrates.
Kang JH, Gao Q, Joyce HJ, Tan HH, Jagadish C, Kim Y, Choi DY, Guo Y, Xu H, Zou J, Fickenscher MA, Smith LM, Jackson HE, Yarrison-Rice JM. Kang JH, et al. Among authors: yarrison rice jm. Nanotechnology. 2010 Jan 22;21(3):035604. doi: 10.1088/0957-4484/21/3/035604. Nanotechnology. 2010. PMID: 19966397
15 results