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Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.
Peng K, Parkinson P, Gao Q, Boland JL, Li Z, Wang F, Mokkapati S, Fu L, Johnston MB, Tan HH, Jagadish C. Peng K, et al. Among authors: gao q. Nanotechnology. 2017 Mar 24;28(12):125202. doi: 10.1088/1361-6528/aa5d80. Epub 2017 Feb 1. Nanotechnology. 2017. PMID: 28145894
Novel growth and properties of GaAs nanowires on Si substrates.
Kang JH, Gao Q, Joyce HJ, Tan HH, Jagadish C, Kim Y, Choi DY, Guo Y, Xu H, Zou J, Fickenscher MA, Smith LM, Jackson HE, Yarrison-Rice JM. Kang JH, et al. Among authors: gao q. Nanotechnology. 2010 Jan 22;21(3):035604. doi: 10.1088/0957-4484/21/3/035604. Nanotechnology. 2010. PMID: 19966397
Vertically standing Ge nanowires on GaAs(110) substrates.
Song MS, Jung JH, Kim Y, Wang Y, Zou J, Joyce HJ, Gao Q, Tan HH, Jagadish C. Song MS, et al. Among authors: gao q. Nanotechnology. 2008 Mar 26;19(12):125602. doi: 10.1088/0957-4484/19/12/125602. Epub 2008 Feb 21. Nanotechnology. 2008. PMID: 21817734
9,462 results