Band gap engineering of chemical vapor deposited graphene by in situ BN doping.
Chang CK, Kataria S, Kuo CC, Ganguly A, Wang BY, Hwang JY, Huang KJ, Yang WH, Wang SB, Chuang CH, Chen M, Huang CI, Pong WF, Song KJ, Chang SJ, Guo JH, Tai Y, Tsujimoto M, Isoda S, Chen CW, Chen LC, Chen KH.
Chang CK, et al. Among authors: hwang jy.
ACS Nano. 2013 Feb 26;7(2):1333-41. doi: 10.1021/nn3049158. Epub 2013 Jan 4.
ACS Nano. 2013.
PMID: 23273110