Yamauchi K - Search Results

1

Structure and magnetic properties of mono- and bi-layer graphene films on ultraprecision figured 4H-SiC(0001) surfaces.

Hattori AN, Okamoto T, Sadakuni S, Murata J, Oi H, Arima K, Sano Y, Hattori K, Daimon H, Endo K, Yamauchi K. Hattori AN, et al. Among authors: yamauchi k. J Nanosci Nanotechnol. 2011 Apr;11(4):2897-902. doi: 10.1166/jnn.2011.3893. J Nanosci Nanotechnol. 2011. PMID: 21776650

2

Nearly diffraction-limited line focusing of a hard-X-ray beam with an elliptically figured mirror.

Yamauchi K, Yamamura K, Mimura H, Sano Y, Saito A, Souvorov A, Yabashi M, Tamasaku K, Ishikawa T, Mori Y. Yamauchi K, et al. J Synchrotron Radiat. 2002 Sep 1;9(Pt 5):313-6. doi: 10.1107/s0909049502012578. Epub 2002 Aug 31. J Synchrotron Radiat. 2002. PMID: 12200576

3

Image quality improvement in a hard X-ray projection microscope using total reflection mirror optics.

Mimura H, Yamauchi K, Yamamura K, Kubota A, Matsuyama S, Sano Y, Ueno K, Endo K, Nishino Y, Tamasaku K, Yabashi M, Ishikawa T, Mori Y. Mimura H, et al. Among authors: yamauchi k. J Synchrotron Radiat. 2004 Jul 1;11(Pt 4):343-6. doi: 10.1107/S090904950401283X. Epub 2004 Jun 23. J Synchrotron Radiat. 2004. PMID: 15211041

4

Wave-optical evaluation of interference fringes and wavefront phase in a hard-x-ray beam totally reflected by mirror optics.

Yamauchi K, Yamamura K, Mimura H, Sano Y, Saito A, Endo K, Souvorov A, Yabashi M, Tamasaku K, Ishikawa T, Mori Y. Yamauchi K, et al. Appl Opt. 2005 Nov 10;44(32):6927-32. doi: 10.1364/ao.44.006927. Appl Opt. 2005. PMID: 16294968

5

Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining.

Sano Y, Yamamura K, Mimura H, Yamauchi K, Mori Y. Sano Y, et al. Among authors: yamauchi k. Rev Sci Instrum. 2007 Aug;78(8):086102. doi: 10.1063/1.2766836. Rev Sci Instrum. 2007. PMID: 17764362

6

One-dimensional Wolter optics with a sub-50 nm spatial resolution.

Matsuyama S, Wakioka T, Kidani N, Kimura T, Mimura H, Sano Y, Nishino Y, Yabashi M, Tamasaku K, Ishikawa T, Yamauchi K. Matsuyama S, et al. Among authors: yamauchi k. Opt Lett. 2010 Nov 1;35(21):3583-5. doi: 10.1364/OL.35.003583. Opt Lett. 2010. PMID: 21042357

7

Wavefield characterization of nearly diffraction-limited focused hard x-ray beam with size less than 10 nm.

Kimura T, Mimura H, Handa S, Yumoto H, Yokoyama H, Imai S, Matsuyama S, Sano Y, Tamasaku K, Komura Y, Nishino Y, Yabashi M, Ishikawa T, Yamauchi K. Kimura T, et al. Among authors: yamauchi k. Rev Sci Instrum. 2010 Dec;81(12):123704. doi: 10.1063/1.3509384. Rev Sci Instrum. 2010. PMID: 21198029

8

A special section on atomically controlled fabrication technology.

Yamauchi K, Saito A, Ariga K. Yamauchi K, et al. J Nanosci Nanotechnol. 2011 Apr;11(4):2761-2. doi: 10.1166/jnn.2011.3888. J Nanosci Nanotechnol. 2011. PMID: 21776630 No abstract available.

9

Evaluation of Schottky barrier diodes fabricated directly on processed 4H-SiC(0001) surfaces.

Sano Y, Shirasawa Y, Okamoto T, Yamauchi K. Sano Y, et al. Among authors: yamauchi k. J Nanosci Nanotechnol. 2011 Apr;11(4):2809-13. doi: 10.1166/jnn.2011.3914. J Nanosci Nanotechnol. 2011. PMID: 21776636

10

Improved optical and electrical characteristics of free-standing GaN substrates by chemical polishing utilizing photo-electrochemical method.

Murata J, Shirasawa Y, Sano Y, Sadakuni S, Yagi K, Okamoto T, Hattori AN, Arima K, Yamauchi K. Murata J, et al. Among authors: yamauchi k. J Nanosci Nanotechnol. 2011 Apr;11(4):2882-5. doi: 10.1166/jnn.2011.3918. J Nanosci Nanotechnol. 2011. PMID: 21776647

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