Sano Y - Search Results

1

Mechanism of atomic-scale passivation and flattening of semiconductor surfaces by wet-chemical preparations.

Arima K, Endo K, Yamauchi K, Hirose K, Ono T, Sano Y. Arima K, et al. Among authors: sano y. J Phys Condens Matter. 2011 Oct 5;23(39):394202. doi: 10.1088/0953-8984/23/39/394202. Epub 2011 Sep 15. J Phys Condens Matter. 2011. PMID: 21921316

2

Nearly diffraction-limited line focusing of a hard-X-ray beam with an elliptically figured mirror.

Yamauchi K, Yamamura K, Mimura H, Sano Y, Saito A, Souvorov A, Yabashi M, Tamasaku K, Ishikawa T, Mori Y. Yamauchi K, et al. Among authors: sano y. J Synchrotron Radiat. 2002 Sep 1;9(Pt 5):313-6. doi: 10.1107/s0909049502012578. Epub 2002 Aug 31. J Synchrotron Radiat. 2002. PMID: 12200576

3

Image quality improvement in a hard X-ray projection microscope using total reflection mirror optics.

Mimura H, Yamauchi K, Yamamura K, Kubota A, Matsuyama S, Sano Y, Ueno K, Endo K, Nishino Y, Tamasaku K, Yabashi M, Ishikawa T, Mori Y. Mimura H, et al. Among authors: sano y. J Synchrotron Radiat. 2004 Jul 1;11(Pt 4):343-6. doi: 10.1107/S090904950401283X. Epub 2004 Jun 23. J Synchrotron Radiat. 2004. PMID: 15211041

4

Element array by scanning X-ray fluorescence microscopy after cis-diamminedichloro-platinum(II) treatment.

Shimura M, Saito A, Matsuyama S, Sakuma T, Terui Y, Ueno K, Yumoto H, Yamauchi K, Yamamura K, Mimura H, Sano Y, Yabashi M, Tamasaku K, Nishio K, Nishino Y, Endo K, Hatake K, Mori Y, Ishizaka Y, Ishikawa T. Shimura M, et al. Among authors: sano y. Cancer Res. 2005 Jun 15;65(12):4998-5002. doi: 10.1158/0008-5472.CAN-05-0373. Cancer Res. 2005. PMID: 15958539 Free article.

5

Wave-optical evaluation of interference fringes and wavefront phase in a hard-x-ray beam totally reflected by mirror optics.

Yamauchi K, Yamamura K, Mimura H, Sano Y, Saito A, Endo K, Souvorov A, Yabashi M, Tamasaku K, Ishikawa T, Mori Y. Yamauchi K, et al. Among authors: sano y. Appl Opt. 2005 Nov 10;44(32):6927-32. doi: 10.1364/ao.44.006927. Appl Opt. 2005. PMID: 16294968

6

Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining.

Sano Y, Yamamura K, Mimura H, Yamauchi K, Mori Y. Sano Y, et al. Rev Sci Instrum. 2007 Aug;78(8):086102. doi: 10.1063/1.2766836. Rev Sci Instrum. 2007. PMID: 17764362

7

One-dimensional Wolter optics with a sub-50 nm spatial resolution.

Matsuyama S, Wakioka T, Kidani N, Kimura T, Mimura H, Sano Y, Nishino Y, Yabashi M, Tamasaku K, Ishikawa T, Yamauchi K. Matsuyama S, et al. Among authors: sano y. Opt Lett. 2010 Nov 1;35(21):3583-5. doi: 10.1364/OL.35.003583. Opt Lett. 2010. PMID: 21042357

8

Wavefield characterization of nearly diffraction-limited focused hard x-ray beam with size less than 10 nm.

Kimura T, Mimura H, Handa S, Yumoto H, Yokoyama H, Imai S, Matsuyama S, Sano Y, Tamasaku K, Komura Y, Nishino Y, Yabashi M, Ishikawa T, Yamauchi K. Kimura T, et al. Among authors: sano y. Rev Sci Instrum. 2010 Dec;81(12):123704. doi: 10.1063/1.3509384. Rev Sci Instrum. 2010. PMID: 21198029

9

Evaluation of Schottky barrier diodes fabricated directly on processed 4H-SiC(0001) surfaces.

Sano Y, Shirasawa Y, Okamoto T, Yamauchi K. Sano Y, et al. J Nanosci Nanotechnol. 2011 Apr;11(4):2809-13. doi: 10.1166/jnn.2011.3914. J Nanosci Nanotechnol. 2011. PMID: 21776636

10

Improved optical and electrical characteristics of free-standing GaN substrates by chemical polishing utilizing photo-electrochemical method.

Murata J, Shirasawa Y, Sano Y, Sadakuni S, Yagi K, Okamoto T, Hattori AN, Arima K, Yamauchi K. Murata J, et al. Among authors: sano y. J Nanosci Nanotechnol. 2011 Apr;11(4):2882-5. doi: 10.1166/jnn.2011.3918. J Nanosci Nanotechnol. 2011. PMID: 21776647

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