Sadasivam KG - Search Results

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Improvement in crystal quality and optical properties of n-type GaN employing nano-scale SiO2 patterned n-type GaN substrate.

Jo MS, Sadasivam KG, Tawfik WZ, Yang SB, Lee JJ, Ha JS, Moon YB, Ryu SW, Lee JK. Jo MS, et al. Among authors: sadasivam kg. J Nanosci Nanotechnol. 2013 Jan;13(1):545-7. doi: 10.1166/jnn.2013.6935. J Nanosci Nanotechnol. 2013. PMID: 23646770

Antimony surfactant effect on green emission InGaN/GaN multi quantum wells grown by MOCVD.

Sadasivam KG, Shim JI, Lee JK. Sadasivam KG, et al. J Nanosci Nanotechnol. 2011 Feb;11(2):1787-90. doi: 10.1166/jnn.2011.3387. J Nanosci Nanotechnol. 2011. PMID: 21456292

Fabrication of 380 nm ultra violet light emitting diodes on nano-patterned n-type GaN substrate.

Baek KS, Sadasivam KG, Lee YG, Song YH, Jeong T, Kim SH, Kim JK, Kim SH, Jeon SR, Lee JK. Baek KS, et al. Among authors: sadasivam kg. J Nanosci Nanotechnol. 2011 Aug;11(8):7495-8. doi: 10.1166/jnn.2011.4816. J Nanosci Nanotechnol. 2011. PMID: 22103228

Improved light extraction efficiency in GaN-based light emitting diode by nano-scale roughening of p-GaN surface.

Park SJ, Sadasivam KG, Chung TH, Hong GC, Kim JB, Kim SM, Park SH, Jeon SR, Lee JK. Park SJ, et al. Among authors: sadasivam kg. J Nanosci Nanotechnol. 2008 Oct;8(10):5393-7. doi: 10.1166/jnn.2008.1030. J Nanosci Nanotechnol. 2008. PMID: 19198463

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