Ren X - Search Results

1

All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2 /Graphene Heterostructures.

Shi J, Liu M, Wen J, Ren X, Zhou X, Ji Q, Ma D, Zhang Y, Jin C, Chen H, Deng S, Xu N, Liu Z, Zhang Y. Shi J, et al. Among authors: ren x. Adv Mater. 2015 Nov 25;27(44):7086-92. doi: 10.1002/adma.201503342. Epub 2015 Oct 7. Adv Mater. 2015. PMID: 26445312

2

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

Zhou Y, Deng B, Zhou Y, Ren X, Yin J, Jin C, Liu Z, Peng H. Zhou Y, et al. Among authors: ren x. Nano Lett. 2016 Mar 9;16(3):2103-7. doi: 10.1021/acs.nanolett.6b00324. Epub 2016 Feb 29. Nano Lett. 2016. PMID: 26913671

3

Ultrastiff and Strong Graphene Fibers via Full-Scale Synergetic Defect Engineering.

Xu Z, Liu Y, Zhao X, Peng L, Sun H, Xu Y, Ren X, Jin C, Xu P, Wang M, Gao C. Xu Z, et al. Among authors: ren x. Adv Mater. 2016 Aug;28(30):6449-56. doi: 10.1002/adma.201506426. Epub 2016 May 17. Adv Mater. 2016. PMID: 27184960

4

Tailoring the thermal and electrical transport properties of graphene films by grain size engineering.

Ma T, Liu Z, Wen J, Gao Y, Ren X, Chen H, Jin C, Ma XL, Xu N, Cheng HM, Ren W. Ma T, et al. Among authors: ren w, ren x. Nat Commun. 2017 Feb 16;8:14486. doi: 10.1038/ncomms14486. Nat Commun. 2017. PMID: 28205514 Free PMC article.

5

Grain Boundary Motion in Two-Dimensional Hexagonal Boron Nitride.

Ren X, Jin C. Ren X, et al. ACS Nano. 2020 Oct 27;14(10):13512-13523. doi: 10.1021/acsnano.0c05501. Epub 2020 Sep 22. ACS Nano. 2020. PMID: 32931249

6

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride.

Ren X, Wang X, Jin C. Ren X, et al. Nano Lett. 2019 Dec 11;19(12):8581-8589. doi: 10.1021/acs.nanolett.9b03114. Epub 2019 Nov 6. Nano Lett. 2019. PMID: 31663768

7

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS₂/WSe₂ hetero-bilayers.

Zhang C, Chuu CP, Ren X, Li MY, Li LJ, Jin C, Chou MY, Shih CK. Zhang C, et al. Among authors: ren x. Sci Adv. 2017 Jan 6;3(1):e1601459. doi: 10.1126/sciadv.1601459. eCollection 2017 Jan. Sci Adv. 2017. PMID: 28070558 Free PMC article.

8

Lateral and Vertical MoSe₂-MoS₂ Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Chen T, Ding D, Shi J, Wang G, Kou L, Zheng X, Ren X, Liu X, Jin C, Zhong J, Hao G. Chen T, et al. Among authors: ren x. J Phys Chem Lett. 2019 Sep 5;10(17):5027-5035. doi: 10.1021/acs.jpclett.9b01961. Epub 2019 Aug 16. J Phys Chem Lett. 2019. PMID: 31357864

9

Deriving 2D M₂X₃ (M = Mo, W, X = S, Se) by periodic assembly of chalcogen vacancy lines in their MX₂ counterparts.

Wang X , Guan X , Ren X , Liu T , Huang W , Cao J , Jin C . Wang X , et al. Among authors: ren x. Nanoscale. 2020 Apr 21;12(15):8285-8293. doi: 10.1039/c9nr10144f. Epub 2020 Apr 1. Nanoscale. 2020. PMID: 32236196

10

Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe₂.

Hong J, Wang C, Liu H, Ren X, Chen J, Wang G, Jia J, Xie M, Jin C, Ji W, Yuan J, Zhang Z. Hong J, et al. Among authors: ren x. Nano Lett. 2017 Nov 8;17(11):6653-6660. doi: 10.1021/acs.nanolett.7b02600. Epub 2017 Oct 18. Nano Lett. 2017. PMID: 29020776 Free article.

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