Liang R - Search Results

1

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors.

Wang G, Luo J, Qin C, Liang R, Xu Y, Liu J, Li J, Yin H, Yan J, Zhu H, Xu J, Zhao C, Radamson HH, Ye T. Wang G, et al. Among authors: liang r. Nanoscale Res Lett. 2017 Dec;12(1):123. doi: 10.1186/s11671-017-1908-0. Epub 2017 Feb 16. Nanoscale Res Lett. 2017. PMID: 28228008 Free PMC article.

2

Wafer-scale high-throughput ordered arrays of Si and coaxial Si/Si(1-x)Ge(x) wires: fabrication, characterization, and photovoltaic application.

Pan C, Luo Z, Xu C, Luo J, Liang R, Zhu G, Wu W, Guo W, Yan X, Xu J, Wang ZL, Zhu J. Pan C, et al. Among authors: liang r. ACS Nano. 2011 Aug 23;5(8):6629-36. doi: 10.1021/nn202075z. Epub 2011 Jul 22. ACS Nano. 2011. PMID: 21749059

3

MoS₂ Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit.

Liu X, Liang R, Gao G, Pan C, Jiang C, Xu Q, Luo J, Zou X, Yang Z, Liao L, Wang ZL. Liu X, et al. Among authors: liang r. Adv Mater. 2018 Jul;30(28):e1800932. doi: 10.1002/adma.201800932. Epub 2018 May 21. Adv Mater. 2018. PMID: 29782679

4

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications.

Kong Z, Wang G, Liang R, Su J, Xun M, Miao Y, Gu S, Li J, Cao K, Lin H, Li B, Ren Y, Li J, Xu J, Radamson HH. Kong Z, et al. Among authors: liang r. Nanomaterials (Basel). 2022 Mar 16;12(6):981. doi: 10.3390/nano12060981. Nanomaterials (Basel). 2022. PMID: 35335793 Free PMC article.

5

Enhanced photoresponsivity and hole mobility of MoTe₂ phototransistors by using an Al₂O₃ high-κ gate dielectric.

Chen W, Liang R, Wang J, Zhang S, Xu J. Chen W, et al. Among authors: liang r. Sci Bull (Beijing). 2018 Aug 15;63(15):997-1005. doi: 10.1016/j.scib.2018.06.009. Epub 2018 Jun 15. Sci Bull (Beijing). 2018. PMID: 36658896

6

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature.

Yu G, Liang R, Wang X, Xu J, Ren TL. Yu G, et al. Among authors: liang r. Sci Bull (Beijing). 2019 Apr 15;64(7):469-477. doi: 10.1016/j.scib.2019.03.005. Epub 2019 Mar 7. Sci Bull (Beijing). 2019. PMID: 36659798

7

Atomic threshold-switching enabled MoS₂ transistors towards ultralow-power electronics.

Hua Q, Gao G, Jiang C, Yu J, Sun J, Zhang T, Gao B, Cheng W, Liang R, Qian H, Hu W, Sun Q, Wang ZL, Wu H. Hua Q, et al. Among authors: liang r. Nat Commun. 2020 Dec 4;11(1):6207. doi: 10.1038/s41467-020-20051-0. Nat Commun. 2020. PMID: 33277501 Free PMC article.

8

Ultrafast Photodetector by Integrating Perovskite Directly on Silicon Wafer.

Geng X, Wang F, Tian H, Feng Q, Zhang H, Liang R, Shen Y, Ju Z, Gou GY, Deng N, Li YT, Ren J, Xie D, Yang Y, Ren TL. Geng X, et al. Among authors: liang r. ACS Nano. 2020 Mar 24;14(3):2860-2868. doi: 10.1021/acsnano.9b06345. Epub 2020 Feb 11. ACS Nano. 2020. PMID: 32027117

9

Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory.

Liu H, Lu T, Li Y, Ju Z, Zhao R, Li J, Shao M, Zhang H, Liang R, Wang XR, Guo R, Chen J, Yang Y, Ren TL. Liu H, et al. Among authors: liang r. Adv Sci (Weinh). 2020 Aug 7;7(19):2001266. doi: 10.1002/advs.202001266. eCollection 2020 Oct. Adv Sci (Weinh). 2020. PMID: 33042746 Free PMC article.

10

Nanoscale Bandgap Tuning across an Inhomogeneous Ferroelectric Interface.

Wang J, Huang H, He W, Zhang Q, Yang D, Zhang Y, Liang R, Wang C, Ma X, Gu L, Chen L, Nan CW, Zhang J. Wang J, et al. Among authors: liang r. ACS Appl Mater Interfaces. 2017 Jul 26;9(29):24704-24710. doi: 10.1021/acsami.7b05138. Epub 2017 Jul 17. ACS Appl Mater Interfaces. 2017. PMID: 28686410

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