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Page 1
Miniaturization of CMOS.
Radamson HH, He X, Zhang Q, Liu J, Cui H, Xiang J, Kong Z, Xiong W, Li J, Gao J, Yang H, Gu S, Zhao X, Du Y, Yu J, Wang G. Radamson HH, et al. Micromachines (Basel). 2019 Apr 30;10(5):293. doi: 10.3390/mi10050293. Micromachines (Basel). 2019. PMID: 31052223 Free PMC article. Review.
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.
Li J, Li Y, Zhou N, Wang G, Zhang Q, Du A, Zhang Y, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Li Y, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Yang T, Li J, Yin H, Zhu H, Wang W, Radamson HH. Li J, et al. Among authors: radamson hh. Materials (Basel). 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771. Materials (Basel). 2020. PMID: 32046197 Free PMC article.
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.
Li J, Li Y, Zhou N, Xiong W, Wang G, Zhang Q, Du A, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Cao Z, Yang T, Li J, Yin H, Zhu H, Luo J, Wang W, Radamson HH. Li J, et al. Among authors: radamson hh. Nanomaterials (Basel). 2020 Apr 20;10(4):793. doi: 10.3390/nano10040793. Nanomaterials (Basel). 2020. PMID: 32326106 Free PMC article.
State of the Art and Future Perspectives in Advanced CMOS Technology.
Radamson HH, Zhu H, Wu Z, He X, Lin H, Liu J, Xiang J, Kong Z, Xiong W, Li J, Cui H, Gao J, Yang H, Du Y, Xu B, Li B, Zhao X, Yu J, Dong Y, Wang G. Radamson HH, et al. Nanomaterials (Basel). 2020 Aug 7;10(8):1555. doi: 10.3390/nano10081555. Nanomaterials (Basel). 2020. PMID: 32784801 Free PMC article. Review.
Selective Digital Etching of Silicon-Germanium Using Nitric and Hydrofluoric Acids.
Li C, Zhu H, Zhang Y, Yin X, Jia K, Li J, Wang G, Kong Z, Du A, Yang T, Zhao L, Huang W, Xie L, Li Y, Ai X, Ma S, Radamson HH. Li C, et al. Among authors: radamson hh. ACS Appl Mater Interfaces. 2020 Oct 21;12(42):48170-48178. doi: 10.1021/acsami.0c14018. Epub 2020 Oct 9. ACS Appl Mater Interfaces. 2020. PMID: 32970945
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.
Zhang Q, Gu J, Xu R, Cao L, Li J, Wu Z, Wang G, Yao J, Zhang Z, Xiang J, He X, Kong Z, Yang H, Tian J, Xu G, Mao S, Radamson HH, Yin H, Luo J. Zhang Q, et al. Among authors: radamson hh. Nanomaterials (Basel). 2021 Mar 5;11(3):646. doi: 10.3390/nano11030646. Nanomaterials (Basel). 2021. PMID: 33808024 Free PMC article.
33 results