Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors.
Wang G, Luo J, Qin C, Liang R, Xu Y, Liu J, Li J, Yin H, Yan J, Zhu H, Xu J, Zhao C, Radamson HH, Ye T.
Wang G, et al. Among authors: yan j.
Nanoscale Res Lett. 2017 Dec;12(1):123. doi: 10.1186/s11671-017-1908-0. Epub 2017 Feb 16.
Nanoscale Res Lett. 2017.
PMID: 28228008
Free PMC article.