Ilahi B - Search Results

1

Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.

Souaf M, Baira M, Nasr O, Alouane MHH, Maaref H, Sfaxi L, Ilahi B. Souaf M, et al. Among authors: ilahi b. Materials (Basel). 2015 Jul 24;8(8):4699-4709. doi: 10.3390/ma8084699. Materials (Basel). 2015. PMID: 28793465 Free PMC article.

2

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate.

Azeza B, Hadj Alouane MH, Ilahi B, Patriarche G, Sfaxi L, Fouzri A, Maaref H, M'ghaieth R. Azeza B, et al. Among authors: ilahi b. Materials (Basel). 2015 Jul 22;8(7):4544-4552. doi: 10.3390/ma8074544. Materials (Basel). 2015. PMID: 28793455 Free PMC article.

3

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.

Al-Saigh R, Baira M, Salem B, Ilahi B. Al-Saigh R, et al. Among authors: ilahi b. Nanoscale Res Lett. 2018 Jun 7;13(1):172. doi: 10.1186/s11671-018-2587-1. Nanoscale Res Lett. 2018. PMID: 29882031 Free PMC article.

4

Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots.

Baira M, Salem B, Madhar NA, Ilahi B. Baira M, et al. Among authors: ilahi b. Nanomaterials (Basel). 2019 Jan 19;9(1):124. doi: 10.3390/nano9010124. Nanomaterials (Basel). 2019. PMID: 30669458 Free PMC article.

5

Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field.

Baira M, Salem B, Ahamad Madhar N, Ilahi B. Baira M, et al. Among authors: ilahi b. Micromachines (Basel). 2019 Apr 12;10(4):243. doi: 10.3390/mi10040243. Micromachines (Basel). 2019. PMID: 31013735 Free PMC article.

6

Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots.

Zaâboub Z, Ilahi B, Sfaxi L, Maaref H, Salem B, Aimez V, Morris D. Zaâboub Z, et al. Among authors: ilahi b. Nanotechnology. 2008 Jul 16;19(28):285715. doi: 10.1088/0957-4484/19/28/285715. Epub 2008 Jun 3. Nanotechnology. 2008. PMID: 21828749

7

Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing.

Alouane MH, Ilahi B, Maaref H, Salem B, Aimez V, Morris D, Gendry M. Alouane MH, et al. Among authors: ilahi b. J Nanosci Nanotechnol. 2011 Oct;11(10):9251-5. doi: 10.1166/jnn.2011.4298. J Nanosci Nanotechnol. 2011. PMID: 22400332

8

Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography.

Ilahi B, Zribi J, Guillotte M, Arès R, Aimez V, Morris D. Ilahi B, et al. Materials (Basel). 2016 Jun 24;9(7):511. doi: 10.3390/ma9070511. Materials (Basel). 2016. PMID: 28773633 Free PMC article.

9

Excitonic properties of wurtzite InP nanowires grown on silicon substrate.

Hadj Alouane MH, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C. Hadj Alouane MH, et al. Among authors: ilahi b. Nanotechnology. 2013 Jan 25;24(3):035704. doi: 10.1088/0957-4484/24/3/035704. Epub 2012 Dec 21. Nanotechnology. 2013. PMID: 23262659

10

Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate.

Alouane MH, Anufriev R, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C. Alouane MH, et al. Among authors: ilahi b. Nanotechnology. 2011 Oct 7;22(40):405702. doi: 10.1088/0957-4484/22/40/405702. Epub 2011 Sep 12. Nanotechnology. 2011. PMID: 21911925

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