Ge W - Search Results

1

High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy.

Wang T, Wang X, Chen Z, Sun X, Wang P, Zheng X, Rong X, Yang L, Guo W, Wang D, Cheng J, Lin X, Li P, Li J, He X, Zhang Q, Li M, Zhang J, Yang X, Xu F, Ge W, Zhang X, Shen B. Wang T, et al. Among authors: ge w. Adv Sci (Weinh). 2018 Jun 27;5(9):1800844. doi: 10.1002/advs.201800844. eCollection 2018 Sep. Adv Sci (Weinh). 2018. PMID: 30250812 Free PMC article.

2

Tunable surface electron spin splitting with electric double-layer transistors based on InN.

Yin C, Yuan H, Wang X, Liu S, Zhang S, Tang N, Xu F, Chen Z, Shimotani H, Iwasa Y, Chen Y, Ge W, Shen B. Yin C, et al. Among authors: ge w. Nano Lett. 2013 May 8;13(5):2024-9. doi: 10.1021/nl400153p. Epub 2013 Apr 29. Nano Lett. 2013. PMID: 23614498

3

Enhanced anisotropic effective g factors of an Al0.25Ga0.75N/GaN heterostructure based quantum point contact.

Lu F, Tang N, Huang S, Larsson M, Maximov I, Graczyk M, Duan J, Liu S, Ge W, Xu F, Shen B. Lu F, et al. Among authors: ge w. Nano Lett. 2013 Oct 9;13(10):4654-8. doi: 10.1021/nl401724m. Epub 2013 Oct 1. Nano Lett. 2013. PMID: 24041238

4

Spin transport study in a Rashba spin-orbit coupling system.

Mei F, Zhang S, Tang N, Duan J, Xu F, Chen Y, Ge W, Shen B. Mei F, et al. Among authors: ge w. Sci Rep. 2014 Feb 7;4:4030. doi: 10.1038/srep04030. Sci Rep. 2014. PMID: 24504193 Free PMC article.

5

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement.

Guo L, Wang XQ, Zheng XT, Yang XL, Xu FJ, Tang N, Lu LW, Ge WK, Shen B, Dmowski LH, Suski T. Guo L, et al. Among authors: ge wk. Sci Rep. 2014 Mar 13;4:4371. doi: 10.1038/srep04371. Sci Rep. 2014. PMID: 24621830 Free PMC article.

6

Identification of helicity-dependent photocurrents from topological surface states in Bi2Se3 gated by ionic liquid.

Duan J, Tang N, He X, Yan Y, Zhang S, Qin X, Wang X, Yang X, Xu F, Chen Y, Ge W, Shen B. Duan J, et al. Among authors: ge w. Sci Rep. 2014 May 8;4:4889. doi: 10.1038/srep04889. Sci Rep. 2014. PMID: 24809330 Free PMC article.

7

Evidence of type-II band alignment in III-nitride semiconductors: experimental and theoretical investigation for In 0.17 Al 0.83 N/GaN heterostructures.

Wang J, Xu F, Zhang X, An W, Li XZ, Song J, Ge W, Tian G, Lu J, Wang X, Tang N, Yang Z, Li W, Wang W, Jin P, Chen Y, Shen B. Wang J, et al. Among authors: ge w. Sci Rep. 2014 Oct 6;4:6521. doi: 10.1038/srep06521. Sci Rep. 2014. PMID: 25283334 Free PMC article.

8

Generation of Rashba spin-orbit coupling in CdSe nanowire by ionic liquid gate.

Zhang S, Tang N, Jin W, Duan J, He X, Rong X, He C, Zhang L, Qin X, Dai L, Chen Y, Ge W, Shen B. Zhang S, et al. Among authors: ge w. Nano Lett. 2015 Feb 11;15(2):1152-7. doi: 10.1021/nl504225c. Epub 2015 Jan 13. Nano Lett. 2015. PMID: 25574856

9

Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers.

He C, Qin Z, Xu F, Hou M, Zhang S, Zhang L, Wang X, Ge W, Shen B. He C, et al. Among authors: ge w. Sci Rep. 2015 Aug 12;5:13046. doi: 10.1038/srep13046. Sci Rep. 2015. PMID: 26267249 Free PMC article.

10

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells.

Rong X, Wang XQ, Chen G, Zheng XT, Wang P, Xu FJ, Qin ZX, Tang N, Chen YH, Sang LW, Sumiya M, Ge WK, Shen B. Rong X, et al. Among authors: ge wk. Sci Rep. 2015 Sep 23;5:14386. doi: 10.1038/srep14386. Sci Rep. 2015. PMID: 26395756 Free PMC article.

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