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Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field.
Micromachines (Basel). 2019 Apr 12;10(4):243. doi: 10.3390/mi10040243.
Micromachines (Basel). 2019.
PMID: 31013735
Free PMC article.
Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.
Al-Saigh R, Baira M, Salem B, Ilahi B.
Al-Saigh R, et al. Among authors: baira m.
Nanoscale Res Lett. 2018 Jun 7;13(1):172. doi: 10.1186/s11671-018-2587-1.
Nanoscale Res Lett. 2018.
PMID: 29882031
Free PMC article.
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Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots.
Baira M, Salem B, Madhar NA, Ilahi B.
Baira M, et al.
Nanomaterials (Basel). 2019 Jan 19;9(1):124. doi: 10.3390/nano9010124.
Nanomaterials (Basel). 2019.
PMID: 30669458
Free PMC article.
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Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.
Souaf M, Baira M, Nasr O, Alouane MHH, Maaref H, Sfaxi L, Ilahi B.
Souaf M, et al. Among authors: baira m.
Materials (Basel). 2015 Jul 24;8(8):4699-4709. doi: 10.3390/ma8084699.
Materials (Basel). 2015.
PMID: 28793465
Free PMC article.
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