Salem B - Search Results

1

Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field.

Baira M, Salem B, Ahamad Madhar N, Ilahi B. Baira M, et al. Among authors: salem b. Micromachines (Basel). 2019 Apr 12;10(4):243. doi: 10.3390/mi10040243. Micromachines (Basel). 2019. PMID: 31013735 Free PMC article.

2

Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots.

Baira M, Salem B, Madhar NA, Ilahi B. Baira M, et al. Among authors: salem b. Nanomaterials (Basel). 2019 Jan 19;9(1):124. doi: 10.3390/nano9010124. Nanomaterials (Basel). 2019. PMID: 30669458 Free PMC article.

3

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.

Al-Saigh R, Baira M, Salem B, Ilahi B. Al-Saigh R, et al. Among authors: salem b. Nanoscale Res Lett. 2018 Jun 7;13(1):172. doi: 10.1186/s11671-018-2587-1. Nanoscale Res Lett. 2018. PMID: 29882031 Free PMC article.

4

O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate.

Abouzaid O, Mehdi H, Martin M, Moeyaert J, Salem B, David S, Souifi A, Chauvin N, Hartmann JM, Ilahi B, Morris D, Ahaitouf A, Ahaitouf A, Baron T. Abouzaid O, et al. Among authors: salem b. Nanomaterials (Basel). 2020 Dec 7;10(12):2450. doi: 10.3390/nano10122450. Nanomaterials (Basel). 2020. PMID: 33297597 Free PMC article.

5

Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing.

Alouane MH, Ilahi B, Maaref H, Salem B, Aimez V, Morris D, Gendry M. Alouane MH, et al. Among authors: salem b. J Nanosci Nanotechnol. 2011 Oct;11(10):9251-5. doi: 10.1166/jnn.2011.4298. J Nanosci Nanotechnol. 2011. PMID: 22400332

6

Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots.

Zaâboub Z, Ilahi B, Sfaxi L, Maaref H, Salem B, Aimez V, Morris D. Zaâboub Z, et al. Among authors: salem b. Nanotechnology. 2008 Jul 16;19(28):285715. doi: 10.1088/0957-4484/19/28/285715. Epub 2008 Jun 3. Nanotechnology. 2008. PMID: 21828749

7

Enhancing the incorporation of Sn in vapor-liquid-solid GeSn nanowires by modulation of the droplet composition.

Zeghouane M, Hijazi H, Bassani F, Lefevre G, Martinez E, Luciani T, Gentile P, Dubrovskii VG, Salem B. Zeghouane M, et al. Among authors: salem b. Nanotechnology. 2022 Mar 25;33(24). doi: 10.1088/1361-6528/ac5c12. Nanotechnology. 2022. PMID: 35263731

8

Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing.

Legallais M, Mehdi H, David S, Bassani F, Labau S, Pelissier B, Baron T, Martinez E, Ghibaudo G, Salem B. Legallais M, et al. Among authors: salem b. ACS Appl Mater Interfaces. 2020 Sep 2;12(35):39870-39880. doi: 10.1021/acsami.0c10515. Epub 2020 Aug 21. ACS Appl Mater Interfaces. 2020. PMID: 32805854

9

Composition-dependent interfacial abruptness in Au-catalyzed Si(1-x)Ge(x)/Si/Si(1-x)Ge(x) nanowire heterostructures.

Periwal P, Sibirev NV, Patriarche G, Salem B, Bassani F, Dubrovskii VG, Baron T. Periwal P, et al. Among authors: salem b. Nano Lett. 2014 Sep 10;14(9):5140-7. doi: 10.1021/nl5019707. Epub 2014 Aug 19. Nano Lett. 2014. PMID: 25118977

10

InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Bru-Chevallier C, El Akra A, Pelloux-Gervais D, Dumont H, Canut B, Chauvin N, Regreny P, Gendry M, Patriarche G, Jancu JM, Even J, Noe P, Calvo V, Salem B. Bru-Chevallier C, et al. Among authors: salem b. J Nanosci Nanotechnol. 2011 Oct;11(10):9153-9. doi: 10.1166/jnn.2011.4282. J Nanosci Nanotechnol. 2011. PMID: 22400316

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