Micolich AP - Search Results

1

A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications.

Gluschke JG, Richter F, Micolich AP. Gluschke JG, et al. Among authors: micolich ap. Rev Sci Instrum. 2019 Aug;90(8):083901. doi: 10.1063/1.5099293. Rev Sci Instrum. 2019. PMID: 31472654

2

Radio-frequency reflectometry on large gated two-dimensional systems.

Taskinen LJ, Starrett RP, Martin TP, Micolich AP, Hamilton AR, Simmons MY, Ritchie DA, Pepper M. Taskinen LJ, et al. Among authors: micolich ap. Rev Sci Instrum. 2008 Dec;79(12):123901. doi: 10.1063/1.3030860. Rev Sci Instrum. 2008. PMID: 19123573

3

Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures.

Yeoh LA, Srinivasan A, Martin TP, Klochan O, Micolich AP, Hamilton AR. Yeoh LA, et al. Among authors: micolich ap. Rev Sci Instrum. 2010 Nov;81(11):113905. doi: 10.1063/1.3502645. Rev Sci Instrum. 2010. PMID: 21133484

4

InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.

Burke AM, Carrad DJ, Gluschke JG, Storm K, Fahlvik Svensson S, Linke H, Samuelson L, Micolich AP. Burke AM, et al. Among authors: micolich ap. Nano Lett. 2015 May 13;15(5):2836-43. doi: 10.1021/nl5043243. Epub 2015 Apr 21. Nano Lett. 2015. PMID: 25879492

5

Towards low-dimensional hole systems in Be-doped GaAs nanowires.

Ullah AR, Gluschke JG, Krogstrup P, Sørensen CB, Nygård J, Micolich AP. Ullah AR, et al. Among authors: micolich ap. Nanotechnology. 2017 Mar 1;28(13):134005. doi: 10.1088/1361-6528/aa6067. Epub 2017 Mar 3. Nanotechnology. 2017. PMID: 28256451

6

Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors.

Gluschke JG, Seidl J, Lyttleton RW, Carrad DJ, Cochrane JW, Lehmann S, Samuelson L, Micolich AP. Gluschke JG, et al. Among authors: micolich ap. Nano Lett. 2018 Jul 11;18(7):4431-4439. doi: 10.1021/acs.nanolett.8b01519. Epub 2018 Jun 27. Nano Lett. 2018. PMID: 29923725

7

p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating.

Ullah AR, Meyer F, Gluschke JG, Naureen S, Caroff P, Krogstrup P, Nygård J, Micolich AP. Ullah AR, et al. Among authors: micolich ap. Nano Lett. 2018 Sep 12;18(9):5673-5680. doi: 10.1021/acs.nanolett.8b02249. Epub 2018 Aug 24. Nano Lett. 2018. PMID: 30134098

8

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors.

Gluschke JG, Seidl J, Burke AM, Lyttleton RW, Carrad DJ, Ullah AR, Fahlvik S, Lehmann S, Linke H, Micolich AP. Gluschke JG, et al. Among authors: micolich ap. Nanotechnology. 2019 Feb 8;30(6):064001. doi: 10.1088/1361-6528/aaf1e5. Nanotechnology. 2019. PMID: 30523834

9

Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy.

Seidl J, Gluschke JG, Yuan X, Naureen S, Shahid N, Tan HH, Jagadish C, Micolich AP, Caroff P. Seidl J, et al. Among authors: micolich ap. Nano Lett. 2019 Jul 10;19(7):4666-4677. doi: 10.1021/acs.nanolett.9b01703. Epub 2019 Jun 26. Nano Lett. 2019. PMID: 31241966

10

Impact of invasive metal probes on Hall measurements in semiconductor nanostructures.

Gluschke JG, Seidl J, Tan HH, Jagadish C, Caroff P, Micolich AP. Gluschke JG, et al. Among authors: micolich ap. Nanoscale. 2020 Oct 15;12(39):20317-20325. doi: 10.1039/d0nr04402d. Nanoscale. 2020. PMID: 33006359

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